Nexperia PBSS4140DPN,115 Dual NPN + PNP Transistor, 1 A, 40 V, 6-Pin TSOP

  • RS Stock No. 518-1485
  • Mfr. Part No. PBSS4140DPN,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

//media.rs-online.com/t_line/L518134-01.gif

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 40 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 370 mW
Minimum DC Current Gain 200
Transistor Configuration Isolated
Maximum Collector Base Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 150 MHz
Pin Count 6
Number of Elements per Chip 2
Length 3.1mm
Maximum Operating Temperature +150 °C
Width 1.7mm
Maximum Collector Emitter Saturation Voltage 0.5 V
Minimum Operating Temperature -65 °C
Dimensions 1 x 3.1 x 1.7mm
Height 1mm
510 In stock for delivery within 4 working days
Price Each (In a Pack of 10)
SGD 0.445
(exc. GST)
SGD 0.476
(inc. GST)
units
Per unit
Per Pack*
10 - 10
SGD0.445
SGD4.45
20 - 40
SGD0.442
SGD4.42
50 - 90
SGD0.438
SGD4.38
100 - 190
SGD0.385
SGD3.85
200 +
SGD0.36
SGD3.60
*price indicative
Packaging Options:
Related Products
Transistors double, Meeting the design challenges of the ...
Description:
Transistors double, Meeting the design challenges of the future, A bountiful selection of double transistors ensures you can pick the best device for your design. For today’s increasingly efficient systems – where both power and space are at a premium ...
The Bipolar Power Transistor is designed for general ...
Description:
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)Straight Lead Version in Plastic Sleeves ...
Devices integrating two transistors are available in ultra-compact ...
Description:
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. Compact complex bipolar power transistorFor DC-DC converterSmall Surface Mount PackagePb ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.