onsemi MJE800G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225
- RS Stock No.:
- 184-4317
- Mfr. Part No.:
- MJE800G
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 184-4317
- Mfr. Part No.:
- MJE800G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.
High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 4 A |
| Maximum Collector Emitter Voltage | 80 V dc |
| Package Type | TO-225 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 40 W |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 80 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Frequency | 1 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 7.8 x 3 x 11.1mm |
| Maximum Operating Temperature | +150 °C |