BIP T03 PNP 15A 60V FG

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

DC Current Gain - hFE = 20-70 @ IC = 4 Adc
Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 15 (Continuous) A
Maximum Collector Emitter Voltage 70 V dc
Package Type TO-204AA
Mounting Type Through Hole
Maximum Power Dissipation 115 W
Minimum DC Current Gain 5
Transistor Configuration Single
Maximum Collector Base Voltage 100 V dc
Maximum Emitter Base Voltage 7 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +200 °C
Length 39.37mm
Transistor Material Si
Height 8.51mm
Width 26.67mm
Minimum Operating Temperature -65 °C
Dimensions 39.37 x 26.67 x 8.51mm
Maximum Collector Emitter Saturation Voltage 3 V dc
100 In stock for delivery within 3 working days
Price Each (In a Box of 100)
SGD 3.685
(exc. GST)
SGD 3.943
(inc. GST)
units
Per unit
Per Box*
100 - 100
SGD3.685
SGD368.50
200 +
SGD3.455
SGD345.50
*price indicative
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