Infineon BFP840FESDH6327XTSA1 NPN Transistor, 35 mA, 2 V, 2.25 V, 4-Pin TSFP

  • RS Stock No. 170-2255
  • Mfr. Part No. BFP840FESDH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2 V, 2.25 V
Package Type TSFP
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.6 V, 2.9 V
Maximum Operating Frequency 85 GHz
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Width 0.8mm
Transistor Material SiGe
Dimensions 1.4 x 0.8 x 0.55mm
Length 1.4mm
Height 0.55mm
Automotive Standard AEC-Q101
3000 In stock for delivery within 4 working days
Price Each (On a Reel of 3000)
Was SGD0.305
SGD 0.238
(exc. GST)
SGD 0.255
(inc. GST)
units
Per unit
Per Reel*
3000 - 3000
SGD0.238
SGD714.00
6000 - 6000
SGD0.235
SGD705.00
9000 +
SGD0.232
SGD696.00
*price indicative
Related Products
The device is a NPN transistor manufactured using ...
Description:
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. High breakdown voltage VCEO = 140 VTypical ft = 20 MHzFully characterized at 125 oC.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Low Voltage Differential Signaling, or LVDS, is an ...
Description:
Low Voltage Differential Signaling, or LVDS, is an electrical signaling system that can run at very high speeds over cheap, twisted-pair copper cables. Applications: Firewire, SATA, SCSI.